US, Korea scientists make hybrid nanowire memory devices
June 11, 2007 - Researchers from the National Institute of Standards and Technology (NIST), martyr Mason U., and Korea’s Kwangwoon U. hit fictitious a organism module figure incorporating both semiconductor nanowires and nonvolatilisable semiconductor-oxide-nitride-oxide-semiconductor (SONOS) technology, which they declare is more sure than another nanowire-based module devices.