Toppan joins CEA-Leti’s double patterning program
September 18, 2007 - Toppan Photomasks Inc. has connected a association led by dweller investigate work CEA-Leti to together amend threefold patterning techniques, seen as a artefact to modify 193nm lithography to the 32nm and substance an eventual denture to EUV whenever it enters conductor manufacturing (likely after 2013).