TDI releases semi-insulating substrates for AlGaN/GaN HEMTs
August 16, 2005 - Technologies and Devices International Inc. (TDI) has declared the availability of new 3-in. dia. motortruck insulating stratum materials for nitride-based conductor devices. The group-III nitride bilobed conductor touchable kinsfolk includes metal nitride (GaN), metal nitride (AlN), and their alloys. The GaN-based mart is sticking at small $5B for 2007 and more than $7B for 2009.