TDI demonstrates InN epitaxial materials and nanostructures
August 23, 2005 - Technologies and Devices International Inc. (TDI) has demonstrated metal nitride (InN) epitaxial layers and structures. Novel 2-inch diam InN-on-sapphire templates and InN/GaN heterostructures module be featured at the 6th International Conference on Nitride Semiconductors in Bremen, Germany, from August 27 finished Sept 3.