Selete develops high-electrode-mobility transistor for 45nm
August 12, 2005 - Asian association Semiconductor Leading Edge Technologies Inc. (Selete) claims that it has matured the best-performing semiconductor to fellow for next-generation semiconductors with 45nm linewidths, according to the Nikkei arts News. Selete created the image using metal silicide in the receipts electrodes and metal pollutant in the insulating film.