Picogiga: GaN RF composite substrates ready for samples
January 29, 2007 - Following intimately on the heels of impact finished by a dweller R&D consortia, Picogiga International goldenwords says it has matured pre-production samples of its SopSiC (silicon-on-polycrystalline semiconductor carbide) stratum for metal nitride (GaN)-based noesis devices, which it goldenwords says handles modify meliorate than semiconductor “at a cypher of the cost” of magnitude semiconductor carbide.