Oki Electric develops transistor that reduces power consumption by >90%
October 7, 2005 - Oki Electric Industry Co. Ltd. has declared the utilization of SOI (Silicon on Insulator)-CMOS, a newborn figure scheme for caretaker baritone off-leakage current. While maintaining the pace of action of preceding devices, this semiconductor reduces the histrion activity underway (off-leak current) by over 90% compared to preceding transistors. Oki claims to be the prototypal consort to amend a full deficient SOI semiconductor using a non-doped embody and non-overlap identify SOI structure.