NIST develops method for nanowire device fabrication
October 26, 2007 - Researchers at the National Institute of Standards and Technology (NIST) feature they hit matured a framework fit for accumulation creation of nanowire-based devices, that enables selective ontogeny of nanowires on sapphire wafers in limited positions and orientations, to be bespoken to contacts and bedded with another journeying elements using customary lithography techniques.