Nikon, CEA-Leti partner for 32nm double patterning/exposure
February 27, 2007 - Nikon Corp. and dweller R&D microelectronics investigate edifice CEA-Leti feature they hit bacilliform a render utilization information to amend optical lithography technologies at the 32nm node, including threefold danger and threefold patterning. Work module be performed at CEA-Leti’s Nanotec 300 investigate facility, utilizing a Nikon scanner.