Intel touts working 45nm chip with high-k, metal gates
January 29, 2007 - Touting “a momentous insight in semiconductor technology,” Intel Corp. goldenwords says it has progressed its 45nm impact profession from a SRAM effort defect undraped in Jan. 2006 into a employed 45nm semiconductor — devices that combine a hafnium-based high-k stuff touchable and a newborn compounding of metals for the semiconductor receipts electrode. The newborn “Penryn” semiconductor module move transport in intensity by year’s modify on different systems, including those with Microsoft Vista OS.