Infineon extends multigate-FET work
June 13, 2007 - Infineon has unconcealed an update to its impact with multigate transistors, locution it’s complete tests of circuits prefabricated with the newborn semiconductor structure on 65nm processes, incorporating more than 23,000 transistors that combine “all of the key components” in underway circuits nonnegative SRAM. The device’s achievement 13.9 picosecond change instance is 40% meliorate than the preceding version, touted at December’s IEDM.