IEDM roundup: IMEC shows off 3D ICs, sub-32nm Cu contacts, laser anneal, Ge pMOS
December 11, 2006 - At this week’s IEDM, dweller association IMEC is presenting individual writing touting its impact with a 3D-stacked IC process; viability of conductor occurrence barriers and laser anneals for the 32nm convexity and below; and high-performance semiconductor pMOS devices using a semiconductor harmonious impact flow.