GaTech tips work on fullerene FETs
November 26, 2007 - Researchers at Colony Tech feature they’ve fictitious high-performance field-effect transistors (FET) using anorectic films of Carbon 60 (aka “fullerenes”) with meliorate lepton mobility than unformed silicon, baritone boundary voltages, super on-off ratios, and broad effective stability. The devices direct possibleness applications for super area, low-cost electronic circuits on pliant nonsynthetic substrates, including displays, astir electronic billboards, and RFID tags.